Seminar
Developing widely tunable, ultra-thin Si NEMS resonators
Speaker
Dr. Amit Banerjee
Associate Professor
Department of Mechanical and Electrical Systems Engineering
Faulty of Engineering
Kyoto University of Advanced Science, Kyoto, Japan
Date & Time
Friday, 27 June 2025
3:00 am
Venue
CPD-2.45 (Centennial Campus)
Abstract:
NEMS resonators utilize high-frequency mechanical vibration of suspended nanostructures for realizing novel applications in ultrasensitive sensing,RF signal processing, efficient information processing, quantum computation, etc. In these emerging applications, NEMS resonator device’s resonance frequency, quality factor, and nonlinear behavior are usually the most critical parameters. An ability to widely and easily tune these parameters in post-fabricated devices (i.e., at the application stage) can bring unprecedented flexibility and new applications of NEMS resonators.However, in the case of microfabricated NEMS resonators, these parameters are usually fixed at the design stage. To eliminate this fundamental limitation of microfabricated NEMS resonator devices, we developed a new class of monolithically microfabricated ultrathin Si NEMS resonators (~20 nm width and ~ 200 mm length) and demonstrated ultra-wide electrostatic tunability of resonance frequency (up to 70% of initial frequency) at room temperature. We also demonstrated ultrawide tuning and cancellation of the cubic nonlinear coefficient in our NEMS resonators. A method for
widely tuning the resonance quality factor (by a factor of 10) is also discussed.
Relevant articles:
1. Wei Yu, Yuma Ohara, Claude Meffan, Jun Hirotani, Amit Banerjee*, Toshiyuki Tsuchiya, “Achieving Ultrawide Tunability in Monolithically
Fabricated Si Nanoresonator Devices”, Nano Lett. 23, 11517–11525 (2023).
2.
3. Wei Yu, Amit Banerjee*, Jun Hirotani, and Toshiyuki Tsuchiya, “Temperature Dependence of Electrostatic Frequency Tunability of Ultrathin
Si Nanoresonators”, Sens. Mater. 36, 3395-3405 (2024)
Research Areas:
