(onsite and online)

Join Zoom Meeting

 https://hku.zoom.us/j/94521050228?pwd=RV17sWh1SfQAbqxuu0Wyz4KccV8Cxq.1

Meeting ID: 945 2105 0228

Password: 346333

Abstract: 

Copper-copper (Cu-Cu) direct bonding enables ultra-high-density, fine-pitch electrical interconnects between chips or wafers, surpassing traditional methods. This capability directly translates to enhanced device performance, improved power efficiency, and increased functional density in next-generation electronics, making it increasingly important for advanced semiconductor packaging and 3D integration. While current research often emphasizes empirical process optimization, this seminar tries to focus on how a deeper understanding rooted in fundamental material properties and physical models can guide improvements in the Cu-Cu bonding process. The discussion addresses how copper's fundamental material properties, including its response under the thermomechanical conditions inherent to bonding, influence critical microscopic events. Examining how these factors govern phenomena like interface contact, atomic transport, and microstructural evolution provides insight into the underlying mechanisms. Relating these fundamental processes, often described using physical models incorporating material and mechanical aspects, offers a materials science perspective for identifying targeted process refinements. Exploring this connection could open future directions, potentially leading towards more predictive process modeling or novel strategies informed by mechanistic understanding to enhance the robustness and reliability of industrial Cu-Cu direct bonding applications.

ALL INTERESTED ARE WELCOME