Two-dimensional materials have been drawn a great attention in the field of field-emitting transistors (FETs) because of the ultrathin layer properties. Aside from several candidates for channel materials, to overcome the trap sites and charge scattering from dielectrics, hexagonal boron nitride (h-BN) shows a great potential to extend the Moore’s law. In particular, single-oriented h-BN has shown great potential for use in electronic devices due to its high dielectric constant, high thermal conductivity, and excellent insulating properties.

Recent progress in the synthesis and characterization of single-oriented h-BN has led to significant advancements in the field of electronics. One key development has been the ability to grow high-quality single-oriented h-BN layers on a variety of substrates, such as molten gold surfaces and bulk copper foil. Simultaneously, with controllable thickness in multilayer h-BN, it dramatically increases the potential in the use of h-BN with tunable dielectric constant. Therefore, recent works about multilayers wafer-scale single-crystal h-BN would be mentioned in this presentation.