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https://hku.zoom.us/j/91638414587?pwd=NHYQ3CEC6DCWU5zbpqvwXqvpt8eNU2.1

Meeting ID: 916 3841 4587

Password: 599331

Abstract:

Nowadays, power electronic devices have been used semiconductor technology to facilitate the conversion and control of electrical power for applications, including high-speed train and power generation. However, the advancement of semiconductor power devices has faced several significant challenges. First, the well-known silicon-based semiconductors possess a relatively low bandgap, resulting in limited breakdown voltage and increased failure probability of device. Also, traditional aluminum wire packaging exhibits poor conductivity, leading to low signal transmission efficiency. Heat dissipation is also a challenge that needs to be overcome. Based on its high breakdown voltage, SiC can be used to manufacture devices with low on-resistance, and its high-speed operation feature can also significantly improve the conversion efficiency of machines equipped with power electronics technology. Also, Cu clips are considered as an improvement to design the SiC power device. Novel technology of producing nano-copper will be utilized to create copper clips for bonding applications. Because of copper’s superior electrical and thermal conductivity, these clips will enhance the power module by reducing parasitic inductance and improving heat dissipation.

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